RT3NGGM Specs and Replacement

Type Designator: RT3NGGM

SMD Transistor Code: NGG

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-88

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RT3NGGM datasheet

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RT3NGGM

RT3NGGM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3NGGM is composite transistor built with two 1.25 RT1N432 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT3N66M, RT3N77M, RT3NAAM, RT3NBBM, RT3NCCM, RT3NDDM, RT3NEEM, RT3NFFM, BD333, RT3NHHM, RT3NJJM, RT3NKKM, RT3NLLM, RT3NMMM, RT3NNNM, RT3NPPM, RT3NQQM

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