RT3NHHM Specs and Replacement

Type Designator: RT3NHHM

SMD Transistor Code: NHH

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-88

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RT3NHHM datasheet

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 rt3nhhm.pdf pdf_icon

RT3NHHM

RT3NHHM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3NHHM is composite transistor built with two 1.25 RT1N436 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT3N77M, RT3NAAM, RT3NBBM, RT3NCCM, RT3NDDM, RT3NEEM, RT3NFFM, RT3NGGM, BDT88, RT3NJJM, RT3NKKM, RT3NLLM, RT3NMMM, RT3NNNM, RT3NPPM, RT3NQQM, RT3NRRM

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