All Transistors. RT3NJJM Datasheet

 

RT3NJJM Datasheet and Replacement


   Type Designator: RT3NJJM
   SMD Transistor Code: NJJ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 24
   Noise Figure, dB: -
   Package: SC-88
 

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RT3NJJM Datasheet (PDF)

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RT3NJJM

RT3NJJM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NJJM is composite transistor built with two 1.25 RT1N14H chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT3NAAM , RT3NBBM , RT3NCCM , RT3NDDM , RT3NEEM , RT3NFFM , RT3NGGM , RT3NHHM , 2SC5200 , RT3NKKM , RT3NLLM , RT3NMMM , RT3NNNM , RT3NPPM , RT3NQQM , RT3NRRM , RT3NSSM .

History: 2SA747 | 2SA743A | STBD909 | BC206 | BSV10 | NTE302 | 2SB1417

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