RT3NQQM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3NQQM
SMD Transistor Code: NQQ
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-88
RT3NQQM Transistor Equivalent Substitute - Cross-Reference Search
RT3NQQM Datasheet (PDF)
..1. Size:188K isahaya
rt3nqqm.pdf
rt3nqqm.pdf
RT3NQQM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NQQM is composite transistor built with two 1.25 RT1N240 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2T3133A-2
