RT3NTTM Specs and Replacement

Type Designator: RT3NTTM

SMD Transistor Code: NTT

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 200 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-88

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RT3NTTM datasheet

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RT3NTTM

RT3NTTM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3NTTM is composite transistor built with two 1.25 RT1N250 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT3NKKM, RT3NLLM, RT3NMMM, RT3NNNM, RT3NPPM, RT3NQQM, RT3NRRM, RT3NSSM, C1815, RT3NUUM, RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, RT3P33M, RT3P55M, RT3P66M

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