All Transistors. RT3NTTM Datasheet

 

RT3NTTM Datasheet and Replacement


   Type Designator: RT3NTTM
   SMD Transistor Code: NTT
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 200 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-88
 

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RT3NTTM Datasheet (PDF)

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RT3NTTM

RT3NTTM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NTTM is composite transistor built with two 1.25 RT1N250 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver

Datasheet: RT3NKKM , RT3NLLM , RT3NMMM , RT3NNNM , RT3NPPM , RT3NQQM , RT3NRRM , RT3NSSM , 2N2222 , RT3NUUM , RT3NVVM , RT3NWWM , RT3NXXM , RT3P11M , RT3P33M , RT3P55M , RT3P66M .

History: RT3NRRM

Keywords - RT3NTTM transistor datasheet

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