RT3NUUM Specs and Replacement

Type Designator: RT3NUUM

SMD Transistor Code: NUU

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R2 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SC-88

 RT3NUUM Substitution

- BJT ⓘ Cross-Reference Search

 

RT3NUUM datasheet

 ..1. Size:188K  isahaya

 rt3nuum.pdf pdf_icon

RT3NUUM

RT3NUUM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION 2.1 RT3NUUM is composite transistor built with two 1.25 RT1N14B chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver... See More ⇒

Detailed specifications: RT3NLLM, RT3NMMM, RT3NNNM, RT3NPPM, RT3NQQM, RT3NRRM, RT3NSSM, RT3NTTM, 2N5401, RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, RT3P33M, RT3P55M, RT3P66M, RT3P77M

Keywords - RT3NUUM pdf specs

 RT3NUUM cross reference

 RT3NUUM equivalent finder

 RT3NUUM pdf lookup

 RT3NUUM substitution

 RT3NUUM replacement