RT3NVVM Datasheet, Equivalent, Cross Reference Search
Type Designator: RT3NVVM
SMD Transistor Code: NVV
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: SC-88
RT3NVVM Transistor Equivalent Substitute - Cross-Reference Search
RT3NVVM Datasheet (PDF)
..1. Size:188K isahaya
rt3nvvm.pdf
rt3nvvm.pdf
RT3NVVM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION 2.1 RT3NVVM is composite transistor built with two 1.25 RT1N24B chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inver
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
