All Transistors. RT3P33M Datasheet

 

RT3P33M Datasheet and Replacement


   Type Designator: RT3P33M
   SMD Transistor Code: P33
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SC-88
 

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RT3P33M Datasheet (PDF)

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RT3P33M

PRELIMINARY RT3P33M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit,

Datasheet: RT3NRRM , RT3NSSM , RT3NTTM , RT3NUUM , RT3NVVM , RT3NWWM , RT3NXXM , RT3P11M , D882 , RT3P55M , RT3P66M , RT3P77M , RT3PDDM , RT3PEEM , RT3PFFM , RT3PRRM , RT3T11M .

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