RT3P33M Specs and Replacement

Type Designator: RT3P33M

SMD Transistor Code: P33

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SC-88

 RT3P33M Substitution

- BJT ⓘ Cross-Reference Search

 

RT3P33M datasheet

 ..1. Size:159K  isahaya

 rt3p33m.pdf pdf_icon

RT3P33M

PRELIMINARY RT3P33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3P33M is compound transistor built with two RT1P441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, ... See More ⇒

Detailed specifications: RT3NRRM, RT3NSSM, RT3NTTM, RT3NUUM, RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, BC337, RT3P55M, RT3P66M, RT3P77M, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M

Keywords - RT3P33M pdf specs

 RT3P33M cross reference

 RT3P33M equivalent finder

 RT3P33M pdf lookup

 RT3P33M substitution

 RT3P33M replacement