RT3P55M Specs and Replacement

Type Designator: RT3P55M

SMD Transistor Code: P55

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SC-88

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RT3P55M datasheet

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RT3P55M

RT3P55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION RT3P55M is compound transistor built with two RT1P144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface ... See More ⇒

Detailed specifications: RT3NSSM, RT3NTTM, RT3NUUM, RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, RT3P33M, S8050, RT3P66M, RT3P77M, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M

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