RT3P77M Specs and Replacement
Type Designator: RT3P77M
SMD Transistor Code: P77
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC-88
RT3P77M Substitution
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RT3P77M datasheet
RT3P77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit mm DESCRIPTION RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface ... See More ⇒
Detailed specifications: RT3NUUM, RT3NVVM, RT3NWWM, RT3NXXM, RT3P11M, RT3P33M, RT3P55M, RT3P66M, TIP122, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, RT3T22M, RT3T33M
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