RT3P77M Datasheet and Replacement
Type Designator: RT3P77M
SMD Transistor Code: P77
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC-88
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RT3P77M Datasheet (PDF)
rt3p77m.pdf

RT3P77M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BDT82F | RCP117 | BSY70 | AC194-9 | UPA801TC-GB | CSA1048 | SCE309
Keywords - RT3P77M transistor datasheet
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History: BDT82F | RCP117 | BSY70 | AC194-9 | UPA801TC-GB | CSA1048 | SCE309



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