RT3PEEM Datasheet and Replacement
Type Designator: RT3PEEM
SMD Transistor Code: PEE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Noise Figure, dB: -
Package: SC-88
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RT3PEEM Datasheet (PDF)
rt3peem.pdf

RT3PEEM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | BCY65VIII | KT8155A | ZXTP2012Z
Keywords - RT3PEEM transistor datasheet
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History: TI413 | KRA741U | D60T5050 | 3DD13007_Z8 | BCY65VIII | KT8155A | ZXTP2012Z



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