RT3PEEM Datasheet and Replacement
Type Designator: RT3PEEM
SMD Transistor Code: PEE
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.22
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 33
Noise Figure, dB: -
Package: SC-88
RT3PEEM Substitution
RT3PEEM Datasheet (PDF)
rt3peem.pdf

RT3PEEM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeOUTLINE DRAWING Unitmm DESCRIPTION RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface
Datasheet: RT3NWWM , RT3NXXM , RT3P11M , RT3P33M , RT3P55M , RT3P66M , RT3P77M , RT3PDDM , 2N3906 , RT3PFFM , RT3PRRM , RT3T11M , RT3T14M , RT3T22M , RT3T33M , RT3T66M , RT3T77M .
History: 2N346
Keywords - RT3PEEM transistor datasheet
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RT3PEEM replacement
History: 2N346



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