All Transistors. RT3T11M Datasheet

 

RT3T11M Datasheet and Replacement


   Type Designator: RT3T11M
   SMD Transistor Code: T11
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SC-88
 

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RT3T11M Datasheet (PDF)

 ..1. Size:166K  isahaya
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RT3T11M

PRELIMINARY RT3T11M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3T11M is compound transistor built with RT1N141 chip and RT1P141 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin

 9.1. Size:235K  isahaya
 rt3t14m.pdf pdf_icon

RT3T11M

PRELIMINARY RT3T14M Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm 2.1 RT3T14M is composite transistor built with RT1N144 1.25 chip and RT1P144 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mountin

Datasheet: RT3P33M , RT3P55M , RT3P66M , RT3P77M , RT3PDDM , RT3PEEM , RT3PFFM , RT3PRRM , A1941 , RT3T14M , RT3T22M , RT3T33M , RT3T66M , RT3T77M , RT3TAAM , RT3TBBM , RT3TCCM .

History: MUN2212LT2 | 2SC4044 | S1954 | S1502 | S1331N | S2802 | 2SA866

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