RT3T14M Specs and Replacement
Type Designator: RT3T14M
SMD Transistor Code: T55
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SC-88
RT3T14M Substitution
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RT3T14M datasheet
PRELIMINARY RT3T14M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm 2.1 RT3T14M is composite transistor built with RT1N144 1.25 chip and RT1P144 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mountin... See More ⇒
PRELIMINARY RT3T11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3T11M is compound transistor built with RT1N141 chip and RT1P141 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒
Detailed specifications: RT3P55M, RT3P66M, RT3P77M, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, BC557, RT3T22M, RT3T33M, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM
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