RT3T33M Specs and Replacement
Type Designator: RT3T33M
SMD Transistor Code: T33
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SC-88
RT3T33M Substitution
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RT3T33M datasheet
PRELIMINARY RT3T33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3T33M is compound transistor built with RT1N441 chip and RT1P441 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒
Detailed specifications: RT3P77M, RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, RT3T22M, 13009, RT3T66M, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM
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