RT3T66M Specs and Replacement

Type Designator: RT3T66M

SMD Transistor Code: T66

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 4.7 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC-88

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RT3T66M datasheet

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RT3T66M

PRELIMINARY RT3T66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3T66M is compound transistor built with RT1N430 chip and RT1P430 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒

Detailed specifications: RT3PDDM, RT3PEEM, RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, RT3T22M, RT3T33M, 2N3906, RT3T77M, RT3TAAM, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, RT3THHM

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