RT3TAAM Specs and Replacement

Type Designator: RT3TAAM

SMD Transistor Code: TAA

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SC-88

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RT3TAAM datasheet

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RT3TAAM

PRELIMINARY RT3TAAM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit mm RT3TAAM is compound transistor built with RT1N151 chip and RT1P151 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin... See More ⇒

Detailed specifications: RT3PFFM, RT3PRRM, RT3T11M, RT3T14M, RT3T22M, RT3T33M, RT3T66M, RT3T77M, TIP31C, RT3TBBM, RT3TCCM, RT3TDDM, RT3TFFM, RT3TGGM, RT3THHM, RT3TLLM, RT3TSSM

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