All Transistors. RT3TAAM Datasheet

 

RT3TAAM Datasheet and Replacement


   Type Designator: RT3TAAM
   SMD Transistor Code: TAA
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 82
   Noise Figure, dB: -
   Package: SC-88
 

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RT3TAAM Datasheet (PDF)

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RT3TAAM

PRELIMINARY RT3TAAM Composite Transistor With ResistorFor Switching ApplicationSilicon Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unitmm RT3TAAM is compound transistor built with RT1N151 chip and RT1P151 chip in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switchin

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