All Transistors. RT5P430C Datasheet

 

RT5P430C Datasheet, Equivalent, Cross Reference Search


   Type Designator: RT5P430C
   SMD Transistor Code: PA
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-59

 RT5P430C Transistor Equivalent Substitute - Cross-Reference Search

   

RT5P430C Datasheet (PDF)

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rt5p430c.pdf

RT5P430C RT5P430C

 8.1. Size:146K  isahaya
rt5p431c.pdf

RT5P430C RT5P430C

RT5P431C Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm 2.8 RT5P431C is a one chip transistor with built-in bias 0.65 1.5 0.65 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 2High collector current Ic=-0.5A Mini package for easy mounting APPLICATION Inve

 8.2. Size:146K  isahaya
rt5p431s.pdf

RT5P430C RT5P430C

RT5P431S Transistor With ResistorFor Switching ApplicationSilicon PNP Epitaxial TypeDESCRIPTION OUTLINE DRAWING Unit: mm RT5P431S is a one chip transistor with built-in bias 4.0 resistor. FEATURE Built-in bias resistor R =4.7k, R =4.7k 1 20.1 High collector current Ic=-0.5A 0.45 Mini package for easy mounting 2.5 2.5 APPLICATION Inverted circ

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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