RTAN430C Specs and Replacement
Type Designator: RTAN430C
SMD Transistor Code: QA
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 40 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 38 MHz
Forward Current Transfer Ratio (hFE), MIN: 820
Package: SC-59
RTAN430C Substitution
- BJT ⓘ Cross-Reference Search
RTAN430C datasheet
Detailed specifications: RT5P431C, RT5P431S, RTAN140C, RTAN140M, RTAN140U, RTAN230C, RTAN230M, RTAN230U, 2222A, RTAN430M, RTAN430U, RTBN131AP1, RTBN141AP1, RTBN14BAP1, RTBN226AP1, RTBN234AP1, RTBN426AP1
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