All Transistors. RTGN426AP Datasheet

 

RTGN426AP Datasheet and Replacement


   Type Designator: RTGN426AP
   SMD Transistor Code: ND
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 0.47 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89
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RTGN426AP Datasheet (PDF)

 ..1. Size:159K  isahaya
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RTGN426AP

SMALL-SIGNAL TRANSISTOR RTGN426AP TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN426AP is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=0.47k,R2=4.7k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN B

 9.1. Size:129K  isahaya
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RTGN426AP

SMALL-SIGNAL TRANSISTOR RTGN432P TRANSISTOR WITH RESISTORFOR SWITHING APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWING Unitmm DISCRIPTION RTGN432P is a one chip transistor with 4.6 MAX1.5built-in bias transistor. 1.6FEATURE Built-in bias resistor R1=4.7k,R2=10k 4.2 MAX 2.5 High collector current IC=1A E CB0.8 MIN Built-i

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History: BCX5516 | CSC460 | BFR48 | DRC9A44W | NZT902 | PBLS4002Y | 2SD2133

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