RTGN426AP Specs and Replacement
Type Designator: RTGN426AP
SMD Transistor Code: ND
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 0.47 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
RTGN426AP Substitution
- BJT ⓘ Cross-Reference Search
RTGN426AP datasheet
SMALL-SIGNAL TRANSISTOR RTGN426AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN426AP is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=0.47k ,R2=4.7k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN B... See More ⇒
SMALL-SIGNAL TRANSISTOR RTGN432P TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING Unit mm DISCRIPTION RTGN432P is a one chip transistor with 4.6 MAX 1.5 built-in bias transistor. 1.6 FEATURE Built-in bias resistor R1=4.7k ,R2=10k 4.2 MAX 2.5 High collector current IC=1A E C B 0.8 MIN Built-i... See More ⇒
Detailed specifications: RTBN234AP1, RTBN426AP1, RTBN432AP1, RTGN131AP, RTGN141AP, RTGN14BAP, RTGN226AP, RTGN234AP, 2N2907, RTGN432P, UMB10NFHA, UMB11NFHA, UMB2NFHA, UMB3NFHA, UMB4NFHA, UMB6NFHA, UMC2NT1G
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