UMD3NFHA Datasheet, Equivalent, Cross Reference Search
Type Designator: UMD3NFHA
SMD Transistor Code: D3
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT-353
UMD3NFHA Transistor Equivalent Substitute - Cross-Reference Search
UMD3NFHA Datasheet (PDF)
emd3fha umd3nfha.pdf
EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
emd3fha umd3nfha imd3afra.pdf
EMD3FHA / UMD3NFHA / IMD3AFRAEMD3 / UMD3N / IMD3ADatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified lOutline(6)EMT6 UMT6Parameter Value (5)(6) (4) (5) (4)VCC50V(1)(1) (2) (2)IC(MAX.)100mA (3) (3)R110kWEMD3EMD3FHA UMD3NFHAUMD3N(SC-107C)R2 SOT-353 (SC-88)10kWSMT6(4)
emd3 umd3n imd3a umd3n.pdf
EMD3 / UMD3N / IMD3A Transistors General purpose (Dual digital transistors) EMD3 / UMD3N / IMD3A Dimensions (Unit : mm) Features 1) Both the DTA114E chip and DTC114E chip in a EMT EMD3or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (6) (5) (4)automatic mounting machines. 3) Transistor elements are independent, eliminating (1) (2) (3)interfer
umd3n imd3a d3 sot23-6sot363.pdf
TransistorsGeneral purpose(dual digital transistors)UMD3N / IMD3AFFeatures FExternal dimensions (Units: mm)1) Both the DTA114E chip andDTC114E chip in a UMT or SMTpackage.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxi
umd3n.pdf
UMD3NNPN-PNP built-in resistors Elektronische BauelementeMulti-Chip Digital TransistorSOT-363o.055(1.40)8.047(1.20)0o .026TYP(0.65TYP)6 5 4 .021REFFeatures(0.525)REF.053(1.35).096(2.45)* DTA114E and DTC114E transistors are .045(1.15).085(2.15)built-in a SOT-363 package. * Transistor elements are independent, .018(0.46)31 2.010(0.26)elim
umd3n.pdf
UMD3N DUAL DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA114E and DTC114E transistors are built-in a package. Transistor elements are independent, eliminating interference. 1 Mounting cost and area can be cut in half. External circuit MARKING:D3 Absolute maximum ratings (Ta=25) Parameter Symbol Limits UnitSupply voltage VCC 50 VInput voltage VIN -10~40 VI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
