All Transistors. UMD6NFHA Datasheet

 

UMD6NFHA Datasheet, Equivalent, Cross Reference Search

Type Designator: UMD6NFHA

SMD Transistor Code: D6

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 4.7 kOhm

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-353

UMD6NFHA Transistor Equivalent Substitute - Cross-Reference Search

 

UMD6NFHA Datasheet (PDF)

1.1. emd6fha umd6nfha imd6afra.pdf Size:1314K _update

UMD6NFHA
UMD6NFHA

EMD6 / UMD6N / IMD6A EMD6FHA / UMD6NFHA / IMD6AFRA Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) VCEO 50V (4) (4) (1) (1) IC (2) (2) 100mA (3) (3) R1 4.7kW EMD6FHA UMD6NFHA EMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6

1.2. umd6nfha.pdf Size:1274K _upd

UMD6NFHA
UMD6NFHA

EMD6 / UMD6N / IMD6A EMD6FHA / UMD6NFHA / IMD6AFRA Datasheet NPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Value (6) (6) (5) (5) VCEO 50V (4) (4) (1) (1) IC (2) (2) 100mA (3) (3) R1 4.7kW EMD6FHA UMD6NFHA EMD6 UMD6N (SC-107C) SOT-353 (SC-88) SMT6

 5.1. umd6n imd6a d6 sot23-6sot363.pdf Size:66K _rohm

UMD6NFHA
UMD6NFHA

Transistors General purpose (dual digital transistors) UMD6N / IMD6A FFeatures FExternal dimensions (Units: mm) 1) Both the DTA143T chip and DTC143T chip in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure A PNP and

5.2. umd6n.pdf Size:67K _rohm

UMD6NFHA
UMD6NFHA

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminati

 5.3. emd6 umd6n imd6a.pdf Size:67K _rohm

UMD6NFHA
UMD6NFHA

EMD6 / UMD6N / IMD6A Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features External dimensions (Units : mm) 1) Both the DTA143T chip and DTC143T chip in an EMT EMD6 or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3) (5) (2) automatic mounting machines. (6) (1) 1.2 1.6 3) Transistor elements are independent, eliminati

5.4. umd6n.pdf Size:124K _secos

UMD6NFHA
UMD6NFHA

UMD6N Dual NPN+PNP Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-363 ? DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. ? Transistor elements are independent, eliminating interference. A ? Mounting cost and area can be cut in half. E L B EQUIVALEN

 5.5. umd6n.pdf Size:404K _htsemi

UMD6NFHA

UMD6N DIGITAL TRANSISTOR (NPN+ PNP) SOT-363 FEATURES DTA143T(PNP) and DTC143T(NPN) transistors are built-in a package. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. 1 External circuit MARKING:D6 Absolute maximum ratings(Ta=25?) Parameter Symbol Limits Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter

Datasheet: UMD12N , UMD12NFHA , UMD22N , UMD22NFHA , UMD2NFHA , UMD3NFHA , UMD4N , UMD5N , C945 , UMD9NFHA , UMH10NFHA , UMH11NFHA , UMH14N , UMH14NFHA , UMH1NFHA , UMH2NFHA , UMH32N .

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