UMH11NFHA Datasheet, Equivalent, Cross Reference Search
Type Designator: UMH11NFHA
SMD Transistor Code: H11
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT-353
UMH11NFHA Transistor Equivalent Substitute - Cross-Reference Search
UMH11NFHA Datasheet (PDF)
emh11fha umh11nfha.pdf
EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)
emh11fha umh11nfha imh11afra.pdf
EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)
emh11 umh11n imh11a.pdf
EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf
umh11n.pdf
TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN
umh11n imh11a h11 sot23-6sot363.pdf
TransistorsGeneral purpose(dual digital transistors )UMH11N / IMH11AFFeatures FExternal dimensions (Units: mm)1) Two DTC114E chips in a UMT orSMT package.2) Mounting possible with UMT3 orSMT3 automatic mounting ma-chines.3) Transistor elements are indepen-dent, eliminating interference.4) Mounting cost and area can be cutin half.FStructureEpitaxial planar typeNPN
umh11n.pdf
MCCTMMicro Commercial ComponentsUMH11NMicro Commercial Components20736 Marilla Street ChatsworthCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference Digital Transistors Design For Saving Space and Cost. Lead Free Finish/RoHS Compliant ("P" Suffix d
umh11n.pdf
UMH11N NPN Multi-ChipElektronische BauelementeBuilt-in Resistors TransistorRoHS Compliant ProductSOT-363o.055(1.40)8Features.047(1.20)0o .026TYP(0.65TYP)* Mounting possible with UMT3 automatic mounting .021REF(0.525)REFmachines. * Transistor elements are independent, .053(1.35).096(2.45)eliminating interference. .045(1.15).085(2.15)* Mounting cos
umh11n.pdf
UMH11N General purpose transistors (dual transistors)SOT-363 FEATURES Two DTC114E chip in a package Mounting possible with SOT-363 automatic mounting machines Transistor elements are independent, eliminating interference 1 Mounting cost and area be cut in half Marking: H11 Equivalent circuit Absolute maximum ratings(Ta=25) Parameter Symbol Limits UnitSupply
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
