3DD5039 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DD5039
SMD Transistor Code: D5039
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 6
Noise Figure, dB: -
Package: TO-220-HF
3DD5039 Transistor Equivalent Substitute - Cross-Reference Search
3DD5039 Datasheet (PDF)
3dd5039.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY R3DD5039 \ Package ;NSpe MAIN CHARACTERISTICS TO-220HF 900 V BV CBO6 A I C1.0 V(max) V C
3dd5036.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY R3DD5036 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C3 V(max) V
3dd5032.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY R3DD5032 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BVCBO 8 A Ic 3 V(max) Vce(sat)
3dd5038.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY R3DD5038 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO10 A I C0.5 V(max) V
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP122 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
