All Transistors. DC8550E Datasheet


DC8550E Datasheet, Equivalent, Cross Reference Search

Type Designator: DC8550E

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: TO92

DC8550E Transistor Equivalent Substitute - Cross-Reference Search


DC8550E Datasheet (PDF)

4.1. dc8550.pdf Size:64K _update_bjt


DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist

5.1. fdc855n.pdf Size:279K _fairchild_semi


January 2008 FDC855N tm Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27m? Features General Description Max rDS(on) = 27m? at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m? at VGS = 4.5V, ID = 5.3A Semiconductors advanced PowerTrench process, thi

Datasheet: 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2N2219 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .


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