All Transistors. EB102 Datasheet

 

EB102 Datasheet and Replacement


   Type Designator: EB102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

EB102 Datasheet (PDF)

 0.1. Size:268K  shenzhen
 eb102h.pdf pdf_icon

EB102

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25C TO-92 PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter- Base Voltage VEBO 9 VCollec

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | NJVMJD45H11RLG | SGSF321

Keywords - EB102 transistor datasheet

 EB102 cross reference
 EB102 equivalent finder
 EB102 lookup
 EB102 substitution
 EB102 replacement

 

 
Back to Top

 


 
.