All Transistors. EB102 Datasheet

 

EB102 Datasheet, Equivalent, Cross Reference Search

Type Designator: EB102

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO92

EB102 Transistor Equivalent Substitute - Cross-Reference Search

 

EB102 Datasheet (PDF)

1.1. eb102h.pdf Size:268K _update_bjt

EB102
EB102

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25°C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter- Base Voltage VEBO 9 V Collec

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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