All Transistors. EB102 Datasheet

 

EB102 Datasheet and Replacement


   Type Designator: EB102
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO92
 

 EB102 Substitution

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EB102 Datasheet (PDF)

 0.1. Size:268K  shenzhen
 eb102h.pdf pdf_icon

EB102

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25C TO-92 PARAMETER SYMBOL VALUE UNITCollector-Base Voltage VCBO 600 VCollector-Emitter Voltage VCEO 400 VEmitter- Base Voltage VEBO 9 VCollec

Datasheet: CHT858BWPTQ , CHT858BWPTR , CHT858BWPTS , CHTA27XPT , DC8550B , DC8550C , DC8550D , DC8550E , C5198 , FA1L3Z-L36 , FA1L3Z-L37 , FA1L3Z-L38 , KSC5802D , KTC601UY , NP061A3 , 2SD1710C , 3DD2553 .

History: RCP113B | KT361B | 2SC2670Y

Keywords - EB102 transistor datasheet

 EB102 cross reference
 EB102 equivalent finder
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