All Transistors. EB102 Datasheet

 

EB102 Datasheet, Equivalent, Cross Reference Search

Type Designator: EB102

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO92

EB102 Transistor Equivalent Substitute - Cross-Reference Search

 

EB102 Datasheet (PDF)

1.1. eb102h.pdf Size:268K _update_bjt

EB102
EB102

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25°C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter- Base Voltage VEBO 9 V Collec

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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