All Transistors. EB102 Datasheet

 

EB102 Datasheet, Equivalent, Cross Reference Search

Type Designator: EB102

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO92

EB102 Transistor Equivalent Substitute - Cross-Reference Search

 

EB102 Datasheet (PDF)

1.1. eb102h.pdf Size:268K _update_bjt

EB102
EB102

Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION: FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25°C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter- Base Voltage VEBO 9 V Collec

Datasheet: 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 , 2SC631 , BF494 , 2SC631AS , 2SC632 , 2SC632A , 2SC633 , 2SC633A , 2SC634 , 2SC634A , 2SC635 .

 

 
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BJT: 3DD2553 | 2SD1710C | NP061A3 | KTC601UY | KSC5802D | FA1L3Z-L38 | FA1L3Z-L37 | FA1L3Z-L36 | EB102 | DC8550E | DC8550D | DC8550C | DC8550B | CHTA27XPT | CHT858BWPTS | CHT858BWPTR | CHT858BWPTQ | CHT857BTPTS | CHT857BTPTR | CHT857BTPTQ |

 

 

 
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