EB102 Specs and Replacement
Type Designator: EB102
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Package: TO92
EB102 Substitution
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EB102 datasheet
Shenzhen Shengyuan Semiconductors Co., LTD. Product Specification EB SERIES TRANSISTORS EB102 FEATURES HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING WIDE SOA APPLICATION FLUORESCENT LAMP ELECTRONIC BALLAST Absolute Maximum Ratings Tc=25 C TO-92 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage VCEO 400 V Emitter- Base Voltage VEBO 9 V Collec... See More ⇒
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