All Transistors. RD9FE-V Datasheet

 

RD9FE-V Datasheet, Equivalent, Cross Reference Search

Type Designator: RD9FE-V

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.75 W

Maximum Collector-Base Voltage |Vcb|: 42 V

Maximum Collector-Emitter Voltage |Vce|: 22 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 900

Noise Figure, dB: -

Package: TO126

RD9FE-V Transistor Equivalent Substitute - Cross-Reference Search

 

RD9FE-V Datasheet (PDF)

5.1. rd9fe.pdf Size:212K _update_bjt

RD9FE-V
RD9FE-V

SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors RD9FE TRANSISTOR (NPN) TO-126 FEATURES Audio amplifier Flash unit of camera 1. EMITTER Switching circuit 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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