RD9FE-V Datasheet, Equivalent, Cross Reference Search
Type Designator: RD9FE-V
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 42 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 900
Noise Figure, dB: -
Package: TO126
RD9FE-V Transistor Equivalent Substitute - Cross-Reference Search
RD9FE-V Datasheet (PDF)
rd9fe.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors RD9FE TRANSISTOR (NPN) TO-126 FEATURES Audio amplifier Flash unit of camera 1. EMITTER Switching circuit 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22
rd9fe.pdf
SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors RD9FE TRANSISTOR (NPN) TO-126 FEATURES Audio amplifier Flash unit of camera 1. EMITTER Switching circuit 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RCP113D
