UNR9214J Datasheet. Specs and Replacement

Type Designator: UNR9214J  📄📄 

SMD Transistor Code: 8D

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.21

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC89

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UNR9214J datasheet

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UNR9214J

Transistors with built-in Resistor UNR92XXJ Series (UN92XXJ Series) Silicon NPN epitaxial planer type Unit mm 1.60+0.05 0.03 For digital circuit 0.12+0.03 0.01 1.00 0.05 3 Features Costs can be reduced through downsizing of the equipment and 1 2 reduction of the number of parts. 0.27 0.02 SS-mini type package, allowing automatic insertion through tape (0.50)(0... See More ⇒

Detailed specifications: UNR9210J, UN9210J, UNR9211J, UN9211J, UNR9212J, UN9212J, UNR9213J, UN9213J, BD335, UN9214J, UNR9215J, UN9215J, UNR9216J, UN9216J, UNR9217J, UN9217J, UNR9218J

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