UNR921BJ Datasheet, Equivalent, Cross Reference Search
Type Designator: UNR921BJ
SMD Transistor Code: 8Y
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SC89
UNR921BJ Transistor Equivalent Substitute - Cross-Reference Search
UNR921BJ Datasheet (PDF)
8.1. Size:307K panasonic
unr921xj un921xj series.pdf
unr921xj un921xj series.pdf
Transistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer typeUnit: mm1.60+0.050.03For digital circuit0.12+0.030.011.000.053 Features Costs can be reduced through downsizing of the equipment and1 2reduction of the number of parts.0.270.02 SS-mini type package, allowing automatic insertion through tape(0.50)(0
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
