UNR921CJ Datasheet, Equivalent, Cross Reference Search
Type Designator: UNR921CJ
SMD Transistor Code: 8Z
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R2 = 47 kOhm
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC89
UNR921CJ Transistor Equivalent Substitute - Cross-Reference Search
UNR921CJ Datasheet (PDF)
unr921xj un921xj series.pdf
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