UNR921MJ Datasheet, Equivalent, Cross Reference Search
Type Designator: UNR921MJ
SMD Transistor Code: EL
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Maximum Collector Power Dissipation (Pc): 0.125
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC89
UNR921MJ Transistor Equivalent Substitute - Cross-Reference Search
UNR921MJ Datasheet (PDF)
unr921xj un921xj series.pdf
Transistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer typeUnit: mm1.60+0.050.03For digital circuit0.12+0.030.011.000.053 Features Costs can be reduced through downsizing of the equipment and1 2reduction of the number of parts.0.270.02 SS-mini type package, allowing automatic insertion through tape(0.50)(0
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: UN6222
