UNR921MJ Datasheet. Specs and Replacement

Type Designator: UNR921MJ  📄📄 

SMD Transistor Code: EL

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC89

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UNR921MJ datasheet

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UNR921MJ

Transistors with built-in Resistor UNR92XXJ Series (UN92XXJ Series) Silicon NPN epitaxial planer type Unit mm 1.60+0.05 0.03 For digital circuit 0.12+0.03 0.01 1.00 0.05 3 Features Costs can be reduced through downsizing of the equipment and 1 2 reduction of the number of parts. 0.27 0.02 SS-mini type package, allowing automatic insertion through tape (0.50)(0... See More ⇒

Detailed specifications: UNR921EJ, UN921EJ, UNR921FJ, UN921FJ, UNR921KJ, UN921KJ, UNR921LJ, UN921LJ, 13005, UNR921NJ, UNR921TJ, UN921TJ, UNR921VJ, UNR5210, UNR5211, UNR5212, UNR5213

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