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UNR921MJ Datasheet and Replacement


   Type Designator: UNR921MJ
   SMD Transistor Code: EL
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC89
 

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UNR921MJ Datasheet (PDF)

 8.1. Size:307K  panasonic
 unr921xj un921xj series.pdf pdf_icon

UNR921MJ

Transistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer typeUnit: mm1.60+0.050.03For digital circuit0.12+0.030.011.000.053 Features Costs can be reduced through downsizing of the equipment and1 2reduction of the number of parts.0.270.02 SS-mini type package, allowing automatic insertion through tape(0.50)(0

Datasheet: UNR921EJ , UN921EJ , UNR921FJ , UN921FJ , UNR921KJ , UN921KJ , UNR921LJ , UN921LJ , S9013 , UNR921NJ , UNR921TJ , UN921TJ , UNR921VJ , UNR5210 , UNR5211 , UNR5212 , UNR5213 .

History: DSS4160U | ERS301 | D44C6 | 2SC1193 | MJE13003M6 | BUX30AVA

Keywords - UNR921MJ transistor datasheet

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