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UNR921TJ Datasheet and Replacement


   Type Designator: UNR921TJ
   SMD Transistor Code: EZ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.125 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC89
 

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UNR921TJ Datasheet (PDF)

 8.1. Size:307K  panasonic
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UNR921TJ

Transistors with built-in ResistorUNR92XXJ Series (UN92XXJ Series)Silicon NPN epitaxial planer typeUnit: mm1.60+0.050.03For digital circuit0.12+0.030.011.000.053 Features Costs can be reduced through downsizing of the equipment and1 2reduction of the number of parts.0.270.02 SS-mini type package, allowing automatic insertion through tape(0.50)(0

Datasheet: UNR921FJ , UN921FJ , UNR921KJ , UN921KJ , UNR921LJ , UN921LJ , UNR921MJ , UNR921NJ , D880 , UN921TJ , UNR921VJ , UNR5210 , UNR5211 , UNR5212 , UNR5213 , UNR5214 , UNR5215 .

History: BCH807-25L

Keywords - UNR921TJ transistor datasheet

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