UNR921TJ Datasheet, Equivalent, Cross Reference Search
Type Designator: UNR921TJ
SMD Transistor Code: EZ
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.125
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 125
°C
Transition Frequency (ft): 150
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC89
UNR921TJ Transistor Equivalent Substitute - Cross-Reference Search
UNR921TJ Datasheet (PDF)
unr921xj un921xj series.pdf
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