UNR521E Datasheet. Specs and Replacement

Type Designator: UNR521E  📄📄 

SMD Transistor Code: 8N

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SC70

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UNR521E datasheet

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UNR521E

Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape packing and magazine packing (... See More ⇒

Detailed specifications: UNR5213, UNR5214, UNR5215, UNR5216, UNR5217, UNR5218, UNR5219, UNR521D, BC547B, UNR521F, UNR521K, UNR521L, UNR521M, UNR521N, UNR521T, UNR521V, UNR521Z

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