UNR521F Datasheet. Specs and Replacement
Type Designator: UNR521F 📄📄
SMD Transistor Code: 8O
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SC70
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UNR521F datasheet
Transistors with built-in Resistor UNR521x Series (UN521x Series) Silicon NPN epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape packing and magazine packing (... See More ⇒
Detailed specifications: UNR5214, UNR5215, UNR5216, UNR5217, UNR5218, UNR5219, UNR521D, UNR521E, TIP142, UNR521K, UNR521L, UNR521M, UNR521N, UNR521T, UNR521V, UNR521Z, UNR2210
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