UNR521K Datasheet and Replacement
Type Designator: UNR521K
SMD Transistor Code: 8P
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SC70
UNR521K Substitution
UNR521K Datasheet (PDF)
unr521x un521x series.pdf

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(
Datasheet: UNR5215 , UNR5216 , UNR5217 , UNR5218 , UNR5219 , UNR521D , UNR521E , UNR521F , 2SC2482 , UNR521L , UNR521M , UNR521N , UNR521T , UNR521V , UNR521Z , UNR2210 , UNR2211 .
History: HEPS9152
Keywords - UNR521K transistor datasheet
UNR521K cross reference
UNR521K equivalent finder
UNR521K lookup
UNR521K substitution
UNR521K replacement
History: HEPS9152



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