UNR521N Datasheet and Replacement
Type Designator: UNR521N
SMD Transistor Code: EX
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC70
UNR521N Substitution
UNR521N Datasheet (PDF)
unr521x un521x series.pdf

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(
Datasheet: UNR5218 , UNR5219 , UNR521D , UNR521E , UNR521F , UNR521K , UNR521L , UNR521M , TIP32C , UNR521T , UNR521V , UNR521Z , UNR2210 , UNR2211 , UNR2212 , UNR2213 , UNR2214 .
History: SE6563
Keywords - UNR521N transistor datasheet
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History: SE6563



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