All Transistors. UNR521N Datasheet

 

UNR521N Datasheet and Replacement


   Type Designator: UNR521N
   SMD Transistor Code: EX
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC70
 

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UNR521N Datasheet (PDF)

 8.1. Size:430K  panasonic
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UNR521N

Transistors with built-in ResistorUNR521x Series (UN521x Series)Silicon NPN epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tapepacking and magazine packing(

Datasheet: UNR5218 , UNR5219 , UNR521D , UNR521E , UNR521F , UNR521K , UNR521L , UNR521M , TIP32C , UNR521T , UNR521V , UNR521Z , UNR2210 , UNR2211 , UNR2212 , UNR2213 , UNR2214 .

History: SE6563

Keywords - UNR521N transistor datasheet

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