All Transistors. UNR221D Datasheet

 

UNR221D Datasheet and Replacement


   Type Designator: UNR221D
   SMD Transistor Code: 8M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 4.7
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SC59
 

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UNR221D Datasheet (PDF)

 8.1. Size:427K  panasonic
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UNR221D

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing

Datasheet: UNR2212 , UNR2213 , UNR2214 , UNR2215 , UNR2216 , UNR2217 , UNR2218 , UNR2219 , BD139 , UNR221E , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , UNR221T , UNR221V .

History: 2N5582 | KSY72

Keywords - UNR221D transistor datasheet

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