UNR221E Datasheet. Specs and Replacement

Type Designator: UNR221E  📄📄 

SMD Transistor Code: 8N

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SC59

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UNR221E datasheet

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UNR221E

Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit mm 0.40+0.10 0.05 For digital circuits 0.16+0.10 0.06 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1 2 Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing ... See More ⇒

Detailed specifications: UNR2213, UNR2214, UNR2215, UNR2216, UNR2217, UNR2218, UNR2219, UNR221D, TIP41C, UNR221F, UNR221K, UNR221L, UNR221M, UNR221N, UNR221T, UNR221V, UNR221Z

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