UNR221E Datasheet and Replacement
Type Designator: UNR221E
SMD Transistor Code: 8N
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SC59
UNR221E Substitution
UNR221E Datasheet (PDF)
unr221x un221x series.pdf

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
Datasheet: UNR2213 , UNR2214 , UNR2215 , UNR2216 , UNR2217 , UNR2218 , UNR2219 , UNR221D , C945 , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , UNR221T , UNR221V , UNR221Z .
Keywords - UNR221E transistor datasheet
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History: AFY30 | 2SC896



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