UNR221L Datasheet. Specs and Replacement
Type Designator: UNR221L 📄📄
SMD Transistor Code: 8Q
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SC59
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UNR221L datasheet
Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit mm 0.40+0.10 0.05 For digital circuits 0.16+0.10 0.06 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1 2 Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing ... See More ⇒
Detailed specifications: UNR2216, UNR2217, UNR2218, UNR2219, UNR221D, UNR221E, UNR221F, UNR221K, 2N2222, UNR221M, UNR221N, UNR221T, UNR221V, UNR221Z, UNR5110, UNR5111, UNR5112
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