UNR221L Datasheet and Replacement
Type Designator: UNR221L
SMD Transistor Code: 8Q
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SC59
UNR221L Substitution
UNR221L Datasheet (PDF)
unr221x un221x series.pdf

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
Datasheet: UNR2216 , UNR2217 , UNR2218 , UNR2219 , UNR221D , UNR221E , UNR221F , UNR221K , C1815 , UNR221M , UNR221N , UNR221T , UNR221V , UNR221Z , UNR5110 , UNR5111 , UNR5112 .
History: 2SD560 | SBP13003 | BD250D | MPSW10 | KT602B | CZTA77
Keywords - UNR221L transistor datasheet
UNR221L cross reference
UNR221L equivalent finder
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History: 2SD560 | SBP13003 | BD250D | MPSW10 | KT602B | CZTA77



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