UNR221T Datasheet and Replacement
Type Designator: UNR221T
SMD Transistor Code: EZ
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC59
UNR221T Substitution
UNR221T Datasheet (PDF)
unr221x un221x series.pdf

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing
Datasheet: UNR2219 , UNR221D , UNR221E , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , 2N2222 , UNR221V , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 .
History: AFY30 | UNR221E | 2SC896
Keywords - UNR221T transistor datasheet
UNR221T cross reference
UNR221T equivalent finder
UNR221T lookup
UNR221T substitution
UNR221T replacement
History: AFY30 | UNR221E | 2SC896



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