UNR221T Datasheet. Specs and Replacement
Type Designator: UNR221T 📄📄
SMD Transistor Code: EZ
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.47
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SC59
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UNR221T datasheet
Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar transistor Unit mm 0.40+0.10 0.05 For digital circuits 0.16+0.10 0.06 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts. 1 2 Mini type package allowing easy automatic insertion through tape (0.95) (0.95) packing ... See More ⇒
Detailed specifications: UNR2219, UNR221D, UNR221E, UNR221F, UNR221K, UNR221L, UNR221M, UNR221N, C1815, UNR221V, UNR221Z, UNR5110, UNR5111, UNR5112, UNR5113, UNR5114, UNR5115
Keywords - UNR221T pdf specs
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BJT Parameters and How They Relate
History: KRC870U | DTA015EEB | RN1408 | MMUN2230L | NB223YG | 2SA1615-Z | NB024FT
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