All Transistors. UNR221T Datasheet

 

UNR221T Datasheet and Replacement


   Type Designator: UNR221T
   SMD Transistor Code: EZ
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SC59
 

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UNR221T Datasheet (PDF)

 8.1. Size:427K  panasonic
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UNR221T

Transistors with built-in ResistorUNR221x Series (UN221x Series)Silicon NPN epitaxial planar transistorUnit: mm0.40+0.100.05For digital circuits0.16+0.100.063 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts.1 2 Mini type package allowing easy automatic insertion through tape(0.95) (0.95)packing

Datasheet: UNR2219 , UNR221D , UNR221E , UNR221F , UNR221K , UNR221L , UNR221M , UNR221N , 2N2222 , UNR221V , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 .

History: AFY30 | UNR221E | 2SC896

Keywords - UNR221T transistor datasheet

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