All Transistors. UNR5112 Datasheet

 

UNR5112 Datasheet and Replacement


   Type Designator: UNR5112
   SMD Transistor Code: 6B
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SC70
 

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UNR5112 Datasheet (PDF)

 8.1. Size:431K  panasonic
 unr511x un511x series.pdf pdf_icon

UNR5112

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

Datasheet: UNR221L , UNR221M , UNR221N , UNR221T , UNR221V , UNR221Z , UNR5110 , UNR5111 , 13007 , UNR5113 , UNR5114 , UNR5115 , UNR5116 , UNR5117 , UNR5118 , UNR5119 , UNR511D .

History: BF321B | DRA3A15E

Keywords - UNR5112 transistor datasheet

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