UNR5112 Datasheet. Specs and Replacement

Type Designator: UNR5112  📄📄 

SMD Transistor Code: 6B

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SC70

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UNR5112 datasheet

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 unr511x un511x series.pdf pdf_icon

UNR5112

Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit mm For digital circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features Costs can be reduced through downsizing of the equipment and reduction of the number of parts 1 2 S-Mini type package, allowing automatic insertion through the tape/ magazine packing (0.65) (0.65)... See More ⇒

Detailed specifications: UNR221L, UNR221M, UNR221N, UNR221T, UNR221V, UNR221Z, UNR5110, UNR5111, C5198, UNR5113, UNR5114, UNR5115, UNR5116, UNR5117, UNR5118, UNR5119, UNR511D

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