UNR5115 Datasheet and Replacement
Type Designator: UNR5115
SMD Transistor Code: 6E
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SC70
UNR5115 Substitution
UNR5115 Datasheet (PDF)
unr511x un511x series.pdf

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)
Datasheet: UNR221T , UNR221V , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , BC337 , UNR5116 , UNR5117 , UNR5118 , UNR5119 , UNR511D , UNR511E , UNR511F , UNR511H .
History: DDTC143ZKA | BCM857DS | SU178 | BFV18 | BU724AS | 2SC892 | UN1110R
Keywords - UNR5115 transistor datasheet
UNR5115 cross reference
UNR5115 equivalent finder
UNR5115 lookup
UNR5115 substitution
UNR5115 replacement
History: DDTC143ZKA | BCM857DS | SU178 | BFV18 | BU724AS | 2SC892 | UN1110R



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