All Transistors. UNR5116 Datasheet

 

UNR5116 Datasheet and Replacement


   Type Designator: UNR5116
   SMD Transistor Code: 6F
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SC70
 

 UNR5116 Substitution

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UNR5116 Datasheet (PDF)

 8.1. Size:431K  panasonic
 unr511x un511x series.pdf pdf_icon

UNR5116

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)

Datasheet: UNR221V , UNR221Z , UNR5110 , UNR5111 , UNR5112 , UNR5113 , UNR5114 , UNR5115 , 2SA1943 , UNR5117 , UNR5118 , UNR5119 , UNR511D , UNR511E , UNR511F , UNR511H , UNR511L .

History: UMX3N | DDTC144GE | FPC1384

Keywords - UNR5116 transistor datasheet

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