UNR511L Datasheet and Replacement
Type Designator: UNR511L
SMD Transistor Code: 6Q
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SC70
UNR511L Substitution
UNR511L Datasheet (PDF)
unr511x un511x series.pdf

Transistors with built-in ResistorUNR511x Series (UN511x Series)Silicon PNP epitaxial planar typeUnit: mmFor digital circuits0.15+0.100.3+0.10.050.03 Features Costs can be reduced through downsizing of the equipment andreduction of the number of parts1 2 S-Mini type package, allowing automatic insertion through the tape/magazine packing (0.65) (0.65)
Datasheet: UNR5116 , UNR5117 , UNR5118 , UNR5119 , UNR511D , UNR511E , UNR511F , UNR511H , BC548 , UNR511M , UNR511N , UNR511T , UNR511V , UNR511Z , UN5110 , UN5111 , UN5112 .
History: MPS6714 | NB221XX | BSV65B | 2SC2531 | BUW11F | 2SC1757 | MJ4211
Keywords - UNR511L transistor datasheet
UNR511L cross reference
UNR511L equivalent finder
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History: MPS6714 | NB221XX | BSV65B | 2SC2531 | BUW11F | 2SC1757 | MJ4211



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