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FJP5027R Specs and Replacement


   Type Designator: FJP5027R
   SMD Transistor Code: J5027R
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 1100 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 60 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 FJP5027R Transistor Equivalent Substitute - Cross-Reference Search

   

FJP5027R detailed specifications

 7.1. Size:59K  fairchild semi
fjp5027.pdf pdf_icon

FJP5027R

FJP5027 High Voltage and High Reliability High Speed Switching Wide SOA TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current (DC) 3 A ICP Collector Curre... See More ⇒

 7.2. Size:238K  onsemi
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FJP5027R

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: UN511F , UN511H , UN511L , UN511M , UN511N , UN511T , UN511V , UN511Z , TIP127 , FJP5027O , ZDT690 , ZDT705 , ZDT758 , 2N3171H , 2N3772J , 2NC5566 , 2SA1012D .

Keywords - FJP5027R transistor specs

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