All Transistors. 3DD104B Datasheet

 

3DD104B Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DD104B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO-3

 3DD104B Transistor Equivalent Substitute - Cross-Reference Search

   

3DD104B Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
3dd104b.pdf

3DD104B
3DD104B

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.1. Size:24K  shaanxi
3dd104.pdf

3DD104B

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD104NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97 4. Use for Low-speed sw

 8.2. Size:183K  inchange semiconductor
3dd104e.pdf

3DD104B
3DD104B

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.3. Size:182K  inchange semiconductor
3dd104c.pdf

3DD104B
3DD104B

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.4. Size:183K  inchange semiconductor
3dd104d.pdf

3DD104B
3DD104B

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.5. Size:182K  inchange semiconductor
3dd104a.pdf

3DD104B
3DD104B

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DD104ADESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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