All Transistors. 3DK104D Datasheet

 

3DK104D Datasheet, Equivalent, Cross Reference Search


   Type Designator: 3DK104D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 110 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-3

 3DK104D Transistor Equivalent Substitute - Cross-Reference Search

   

3DK104D Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
3dk104d.pdf

3DK104D 3DK104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104DDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.1. Size:169K  china
3dk104h.pdf

3DK104D

3DK104H NPN PCM TC=25 700 mW ICM 400 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 100 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=4V 0.1 A VBEsat 0.9 IC=30mA V IB=3mA

 8.2. Size:32K  shaanxi
3dk104.pdf

3DK104D

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DK104, 3DK105 NPN Silicon High Frequency Moddle Power Switch Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation and high frequency switch, high frequency sma

 8.3. Size:183K  inchange semiconductor
3dk104b.pdf

3DK104D 3DK104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104BDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.4. Size:183K  inchange semiconductor
3dk104f.pdf

3DK104D 3DK104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104FDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.5. Size:183K  inchange semiconductor
3dk104c.pdf

3DK104D 3DK104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104CDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

 8.6. Size:183K  inchange semiconductor
3dk104e.pdf

3DK104D 3DK104D

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor 3DK104EDESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCW46 | NSV60601MZ4T3G | 2SC1493

 

 
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