BU2515AX Datasheet, Equivalent, Cross Reference Search
Type Designator: BU2515AX
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7.5 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: SOT399
BU2515AX Transistor Equivalent Substitute - Cross-Reference Search
BU2515AX Datasheet (PDF)
bu2515ax bu2515ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0
bu2515ax.pdf
isc Silicon NPN Power Transistor BU2515AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
bu2515af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515AF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use inhorizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0
bu2515af.pdf
isc Silicon NPN Power Transistor BU2515AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec
bu2515df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plasticenvelope intended for use in horizontal deflection circuits of pc monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter
bu2515dx.pdf
isc Silicon NPN Power Transistor BU2515DXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
bu2515df.pdf
isc Silicon NPN Power Transistor BU2515DFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofPC monitors.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
