BU2520AW Specs and Replacement

Type Designator: BU2520AW

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Emitter-Base Voltage |Veb|: 7.5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 115 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO247 SOT429

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BU2520AW datasheet

 ..1. Size:62K  philips

bu2520aw 1.pdf pdf_icon

BU2520AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi... See More ⇒

 ..2. Size:62K  philips

bu2520aw.pdf pdf_icon

BU2520AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emi... See More ⇒

 ..3. Size:215K  inchange semiconductor

bu2520aw.pdf pdf_icon

BU2520AW

isc Silicon NPN Power Transistor BU2520AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of large screen color TV receivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒

 7.1. Size:96K  philips

bu2520af.pdf pdf_icon

BU2520AW

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Col... See More ⇒

Detailed specifications: 3DD4515, BD134, BDY96D, BU2507AX, BU2507DX, BU2508AW, BU2508DW, BU2515AX, BD136, BU2523AF, BU2523AX, BU2527AW, BU2532AL, BU2532AW, BU2708AF, BU2708AX, BU406FI

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