2N1306 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N1306
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO5
2N1306 Transistor Equivalent Substitute - Cross-Reference Search
2N1306 Datasheet (PDF)
2n1302 2n1304 2n1306 2n1308.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.comTMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n1303 2n1305 2n1307 2n1309.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
Datasheet: 2N1299 , 2N130 , 2N1300 , 2N1301 , 2N1302 , 2N1303 , 2N1304 , 2N1305 , 2SC1740 , 2N1307 , 2N1308 , 2N1309 , 2N1309A , 2N130A , 2N131 , 2N1310 , 2N1311 .