All Transistors. MJ10012T Datasheet

 

MJ10012T Datasheet, Equivalent, Cross Reference Search

Type Designator: MJ10012T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 350 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

MJ10012T Transistor Equivalent Substitute - Cross-Reference Search

 

MJ10012T Datasheet (PDF)

1.1. mj10012t.pdf Size:216K _inchange_semiconductor

MJ10012T
MJ10012T

isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATIN

3.1. mj10012.pdf Size:191K _update_bjt

MJ10012T
MJ10012T

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN • Collector–Emitter Sustaining Voltage

3.2. mj10012r.pdf Size:191K _motorola

MJ10012T
MJ10012T

Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are highvoltage, highcurrent Darlington transistors POWER TRANSISTORS designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN CollectorEmitter Sustaining Voltage SILICON

 3.3. mj10012.pdf Size:116K _inchange_semiconductor

MJ10012T
MJ10012T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage,high current Ў¤ DARLINGTON APPLICATIONS Ў¤ Automotive ignition Ў¤ Switching regulator Ў¤ Motor control applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Abolute maximum ratings(Ta=2

Datasheet: 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
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