All Transistors. MJ10012T Datasheet


MJ10012T Datasheet, Equivalent, Cross Reference Search

Type Designator: MJ10012T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 65 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 350 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

MJ10012T Transistor Equivalent Substitute - Cross-Reference Search


MJ10012T Datasheet (PDF)

0.1. mj10012t.pdf Size:216K _inchange_semiconductor


isc Silicon NPN Darlington Power Transistor MJ10012T DESCRIPTION ·Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications ABSOLUTE MAXIMUM RATIN

7.1. mj10012 mj10012r.pdf Size:191K _motorola


Order this document MOTOROLA by MJ10012/D SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor 10 AMPERE The MJ10012 and MJH10012 are high voltage, high curr

7.2. mj10012.pdf Size:116K _inchange_semiconductor


Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ10012 DESCRIPTION ·With TO-3 package ·High voltage,high current ·DARLINGTON APPLICATIONS ·Automotive ignition ·Switching regulator ·Motor control applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abolute maximum ratings(Ta=25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .


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